Research Output per year
Personal profile
Personal Profile
Doctoral Degree in Engineering Science
Fingerprint Fingerprint is based on mining the text of the person's scientific documents to create an index of weighted terms, which defines the key subjects of each individual researcher.
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Gallium arsenide
Engineering & Materials Science
Bipolar transistors
Engineering & Materials Science
Gamma rays
Engineering & Materials Science
Irradiation
Engineering & Materials Science
Ionizing radiation
Engineering & Materials Science
Ions
Engineering & Materials Science
Radiation
Engineering & Materials Science
Neutrons
Engineering & Materials Science
Network
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Research Output 2009 2017
A comparative study between X-rays and gamma-rays irradiation on electrical characteristics of bipolar junction transistors (BJTs)
Chee, F. P., Tiwari, A. K., Alias, A., Salleh, S. & Abdulamir, H. F., Feb 1 2017, In : Advanced Science Letters. 23, 2, p. 1416-1421 6 p.Research output: Contribution to journal › Article
Bipolar transistors
Gamma Rays
Energy Transfer
Gamma rays
Irradiation
Preface
Abdulamir, H. F., 2017, In : Solid State Phenomena. 263 SSPResearch output: Contribution to journal › Editorial
Stopping power and range of cesium-137 gamma rays in gallium arsenide field effect transistor (GaAsFET)
Abdulamir, H. F., 2017, Functional Materials and Metallurgy - ICFMM 2016. Trans Tech Publications Ltd, Vol. 263 SSP. p. 170-175 6 p. (Solid State Phenomena; vol. 263 SSP).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
cesium 137
Cesium
Gallium arsenide
stopping power
Field effect transistors
A model for neutron radiation damage in metal oxide semiconductor (MOS) structures
Abdulamir, H. F., Husin, A. H., Salleh, S. & Chee, F. P., 2016, Materials and Technologies in Engineering Activity. Trans Tech Publications Ltd, Vol. 706. p. 51-54 4 p. (Key Engineering Materials; vol. 706).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
Radiation damage
Neutrons
Metals
Defects
MOS devices
1
Citations
Calculation of the rate of helium ion dispersion in gallium arsenide compound
Abdulamir, H. F., Husin, A. H., Alias, A. & Chee, F. P., Jan 1 2016, Key Engineering Materials VI. Makabe, C., Nindhia, T. G. T., Korsunsky, A. M. & Amir, H. F. A. (eds.). Trans Tech Publications Ltd, p. 179-185 7 p. (Key Engineering Materials; vol. 705).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
Helium
Gallium arsenide
Ions
Atoms
Phonons