Abstract
Synthesis of nanoporous network Nb2O5has been conducted via anodization technique in the flouride-organic based solution. The structure morphology and the properties of the nanoporous films were characterized using field emission scanning electron microscopy (FESEM). In this research, a humidity sensor based on 1.5 micrometer thick nanoporous Nb2O5was developed and their performance was evaluated under 40% to 90% relative humidity at room temperature and different bias voltages of 2, 5 and 8 V. The highest relative sensitivity achieved was 156.2 for humidity sensor operated at bias voltage of 5 V.
| Language | English |
|---|---|
| Title of host publication | 2018 IEEE International Conference on Semiconductor Electronics, ICSE 2018 - Proceedings |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| Pages | 89-92 |
| Number of pages | 4 |
| Volume | 2018-August |
| ISBN (Electronic) | 9781538652831 |
| DOIs | |
| Publication status | Published - Oct 3 2018 |
| Event | 13th IEEE International Conference on Semiconductor Electronics, ICSE 2018 - Kuala Lumpur, Malaysia Duration: Aug 15 2018 → Aug 17 2018 |
Other
| Other | 13th IEEE International Conference on Semiconductor Electronics, ICSE 2018 |
|---|---|
| Country | Malaysia |
| City | Kuala Lumpur |
| Period | 8/15/18 → 8/17/18 |
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All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
Cite this
2018 IEEE International conference on semiconductor electronics (ICSE) synthesis, properties and humidity detection of anodized Nb2O5 films. / Rani, Rozina Abdul; Zoolfakar, Ahmad Sabirin; Ryeeshyam, Mohamad Fauzee Mohamad; Azhar, Naiwa Ezira Ahmed; Mamat, Mohamad Hafiz; Alrokavan, Salman; Khan, Haseeb A.; Mahmood, Mohamad Rusop.
2018 IEEE International Conference on Semiconductor Electronics, ICSE 2018 - Proceedings. Vol. 2018-August Institute of Electrical and Electronics Engineers Inc., 2018. p. 89-92 8481330.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - 2018 IEEE International conference on semiconductor electronics (ICSE) synthesis, properties and humidity detection of anodized Nb2O5 films
AU - Rani, Rozina Abdul
AU - Zoolfakar, Ahmad Sabirin
AU - Ryeeshyam, Mohamad Fauzee Mohamad
AU - Azhar, Naiwa Ezira Ahmed
AU - Mamat, Mohamad Hafiz
AU - Alrokavan, Salman
AU - Khan, Haseeb A.
AU - Mahmood, Mohamad Rusop
PY - 2018/10/3
Y1 - 2018/10/3
N2 - Synthesis of nanoporous network Nb2O5has been conducted via anodization technique in the flouride-organic based solution. The structure morphology and the properties of the nanoporous films were characterized using field emission scanning electron microscopy (FESEM). In this research, a humidity sensor based on 1.5 micrometer thick nanoporous Nb2O5was developed and their performance was evaluated under 40% to 90% relative humidity at room temperature and different bias voltages of 2, 5 and 8 V. The highest relative sensitivity achieved was 156.2 for humidity sensor operated at bias voltage of 5 V.
AB - Synthesis of nanoporous network Nb2O5has been conducted via anodization technique in the flouride-organic based solution. The structure morphology and the properties of the nanoporous films were characterized using field emission scanning electron microscopy (FESEM). In this research, a humidity sensor based on 1.5 micrometer thick nanoporous Nb2O5was developed and their performance was evaluated under 40% to 90% relative humidity at room temperature and different bias voltages of 2, 5 and 8 V. The highest relative sensitivity achieved was 156.2 for humidity sensor operated at bias voltage of 5 V.
UR - http://www.scopus.com/inward/record.url?scp=85056271343&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85056271343&partnerID=8YFLogxK
U2 - 10.1109/SMELEC.2018.8481330
DO - 10.1109/SMELEC.2018.8481330
M3 - Conference contribution
VL - 2018-August
SP - 89
EP - 92
BT - 2018 IEEE International Conference on Semiconductor Electronics, ICSE 2018 - Proceedings
PB - Institute of Electrical and Electronics Engineers Inc.
ER -