Transparent hybrid ZnO-graphene film for high stability switching behavior of memristor device

T. N.T.A. Aziz, A. B. Rosli, M. M. Yusoff, Sukreen Hana Herman, Zurita Zulkifli

Research output: Contribution to journalArticle

Abstract

The objective of this study was to obtain high stability of switching behavior by employing hybrid Zinc Oxide-Graphene (ZnO-G) structure in memristor device. ZnO was grown on a glass substrate using thermal chemical vapor deposition (TCVD) at different substrate temperature of 350 °C, 450 °C and 550 °C. Graphene in water solution was transformed on ZnO thin film using water bath at 90 °C. Raman spectra and FESEM images showed that the thin film exhibited multilayers graphene on ZnO surface has been formed. The multilayer graphene is highly transparent as the ZnO surface morphology can be observed underneath the graphene layer. Switching cycle was found consistent even after several cycles. Due to the limited oxygen ion mobility present in the oxide bulk, the switching cycle of hybrid ZnO-G devices can be repeated many times without degrade which showed more stable properties than those of ZnO devices. From I-V characteristic, it was found that high serial resistance of graphene is contributed to the reduced current consumption of Graphene-based devices to 200 µA. The finding showed that, hybrid ZnO-G structure has been successfully fabricated on glass substrate with stable switching properties compared to pristine ZnO memristive device.

LanguageEnglish
Pages68-76
Number of pages9
JournalMaterials Science in Semiconductor Processing
Volume89
DOIs
Publication statusPublished - Jan 1 2019

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Memristors
Graphite
Graphene
graphene
Zinc Oxide
Zinc oxide
zinc oxides
Multilayers
cycles
Substrates
Glass
Thin films
Water
glass
high resistance
Oxides
thin films
oxygen ions
Surface morphology
Raman scattering

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Transparent hybrid ZnO-graphene film for high stability switching behavior of memristor device. / Aziz, T. N.T.A.; Rosli, A. B.; Yusoff, M. M.; Herman, Sukreen Hana; Zulkifli, Zurita.

In: Materials Science in Semiconductor Processing, Vol. 89, 01.01.2019, p. 68-76.

Research output: Contribution to journalArticle

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AU - Herman, Sukreen Hana

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